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| NSS40200UW6T1G 40 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. * This is a Pb-Free Device MAXIMUM RATINGS (TA = 25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -40 -40 -7.0 -2.0 -4.0 Unit Vdc Vdc Vdc Adc A Pin 1 E C WDFN6 CASE 506AP 4 EMITTER http://onsemi.com -40 VOLTS 4.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW COLLECTOR 1, 2, 5, 6 3 BASE HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation, TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead #1 Total Device Dissipation (Single Pulse < 10 sec) Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RqJL (Note 2) PDsingle (Notes 2 & 3) TJ, Tstg Max 875 7.0 143 1.5 11.8 85 23 3.0 -55 to +150 Unit mW mW/C C/W W mW/C C/W C/W W C VA = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) MARKING DIAGRAM 1 6 2 VA MG 5 G 3 4 ORDERING INFORMATION Device NSS40200UW6T1G Package WDFN6 (Pb-Free) Shipping 3000/ Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 September, 2006 - Rev. 0 Publication Order Number: NSS40200UW6/D NSS40200UW6T1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -40 Vdc, IE = 0) Emitter Cutoff Current (VEB = -7.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 4) (IC = -0.1 A, IB = -0.010 A) (Note 5) (IC = -1.0 A, IB = -0.100 A) (IC = -1.0 A, IB = -0.010 A) (IC = -2.0 A, IB = -0.020 A) Base -Emitter Saturation Voltage (Note 4) (IC = -1.0 A, IB = -0.01 A) Base -Emitter Turn-on Voltage (Note 4) (IC = -2.0 A, VCE = -3.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 5. Guaranteed by design but not tested. td tr ts tf - - - - - - - - 70 150 525 155 ns ns ns ns hFE 150 150 150 150 VCE(sat) - - - - VBE(sat) - VBE(on) - fT 140 Cibo Cobo - - - - 500 100 pF pF -0.80 -0.900 MHz -0.76 -0.900 V - -0.100 - - -0.020 -0.120 -0.200 -0.300 V - - - - - - - - V V(BR)CEO -40 V(BR)CBO -40 V(BR)EBO -7.0 ICBO - IEBO - - -0.1 - -0.1 mAdc - - mAdc - - Vdc - - Vdc Vdc Symbol Min Typical Max Unit http://onsemi.com 2 NSS40200UW6T1G 0.15 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat) = 150C VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.30 IC/IB = 100 0.25 0.20 0.15 0.10 0.05 0 0.001 150C 25C VCE(sat) = -55C 0.10 25C 0.05 -55C 0 0.001 0.01 0.1 1.0 10 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 700 150C (5 V) hFE, DC CURRENT GAIN 600 150C (2 V) 500 400 300 200 -55C (2 V) 100 0.001 0.01 0.1 1 10 25C (5 V) 25C (2 V) -55C (5 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.1 1.0 0.9 0.8 25C 0.7 0.6 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1.0 10 150C IC/IB = 10 -55C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.001 0.01 0.1 1.0 10 150C VCE = -1.0 V -55C 25C VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.0 10 mA 100 mA IC = 500 mA 0.8 0.6 0.4 300 mA 0.2 0 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn-On Voltage vs. Collector Current http://onsemi.com 3 Figure 6. Saturation Region NSS40200UW6T1G 475 Cibo, INPUT CAPACITANCE (pF) Cibo (pF) 425 375 325 275 225 175 0 1.0 2.0 3.0 4.0 5.0 6.0 VEB, EMITTER BASE VOLTAGE (V) Cobo, OUTPUT CAPACITANCE (pF) 140 130 120 110 100 90 80 70 60 50 40 30 0 5.0 10 15 20 25 30 35 VCB, COLLECTOR BASE VOLTAGE (V) Cobo (pF) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 S 100 mS 1.0 mS 1 IC (A) 0.1 10 mS 0.01 0.01 Thermal Limit 0.1 1 VCE (Vdc) 10 100 Figure 9. PNP Safe Operating Area http://onsemi.com 4 NSS40200UW6T1G PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP-01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. CENTER TERMINAL LEAD IS OPTIONAL. TERMINAL LEAD IS CONNECTED TO TERMINAL LEAD # 4. 6. PINS 1, 2, 5 AND 6 ARE TIED TO THE FLAG. DIM A A1 A3 b b1 D D2 E E2 e K L L2 J J1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 0.51 0.61 2.00 BSC 1.00 1.20 2.00 BSC 1.10 1.30 0.65 BSC 0.15 REF 0.20 0.30 0.20 0.30 0.27 REF 0.65 REF D A B PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C 0.10 C 7X 0.08 C D2 6X L 1 3 E2 NOTE 5 K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative III III III A3 A1 4X E A C e L2 b1 6X SEATING PLANE SOLDERING FOOTPRINT* 2.30 6X 1.10 6X 0.43 0.10 C A 0.05 C B 1.25 1 0.35 0.60 0.35 6 4 b 6X J J1 BOTTOM VIEW 0.10 C A 0.05 C B 0.34 0.66 DIMENSIONS: MILLIMETERS NOTE 3 0.65 PITCH *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NSS40200UW6/D |
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